TRANSRESISTIVE AMPLIFIER WITH PARAPHASE INPUT TO CONVERT SIGNALS OF AVALANCHE PHOTODIODES Russian patent published in 2014 - IPC H01J40/14 H03F3/08 

FIELD: radio engineering, communication.

SUBSTANCE: device contains the first (1) and the second (2) current outputs, the first (3) and the second (4) input transistors with common bases, the first (5) and the second (6) auxiliary transistors, whose bases are connected to auxiliary voltage source (7). Emitters are connected to the first (8) power source bus via corresponding the first (9) and the second (10) current-stabilising two-poles, and collectors are connected to the corresponding emitters of the first (3) and the second (4) input transistors, the third (11) current-stabilising two-pole, connected between the bus of the second (12) power source and collector of the first (3) input transistor, the fourth (13) current-stabilising two-pole is connected between the bus of the second (12) power source and collector of the second (4) input transistor, the first (14) output transistor, whose base is connected to collector of the first (3) input transistor, and collector is connected to the bus of the second (12) power source, and emitter is connected to the first (15) device output and via the fifth (16) current-stabilising two-pole is connected to the bus of the first (8) power source, the second (17) output transistor, whose base is connected to collector of the second (4) input transistor, collector is connected to the bus of the second (12) power source, and emitter is connected to the second (18) device output and to the bus of the first (8) power source via the sixth (19) current-stabilising two-pole. The first (1) and the second (2) current inputs of the device are connected to the emitters of the corresponding input transistors (3) and (4), auxiliary resistors (20) and (21), connected in series, are connected between the first and the second device outputs (15) and (18). Common assembly of the resistors is connected to the bases of the first and the second input transistors (3 and 4), between the emitters of the first and the second auxiliary transistors (5 and 6) the third and the fourth auxiliary resistors (22 and 23) are connected in series. Their common assembly is connected to the collector of the first (24) auxiliary transistor, whose emitter, in turn, is connected to the common bus (25) of the first and the second power sources (8 and 12), and the base is connected to the common assembly of the fifth and the sixth auxiliary resistors (26 and 27), connected in series between the first and the second current outputs of the device (1 and 2).

EFFECT: expansion of transistance R₀ variation range.

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