FERROMAGNETIC SEMICONDUCTOR MATERIAL Russian patent published in 2014 - IPC H01L21/425 C01G23/47 

FIELD: physics.

SUBSTANCE: invention relates to semiconductor electronics materials and can be used to make components of spintronic devices, which combine a source and a receiver of polarised spins of charge carriers in a ferromagnetic semiconductor/nonmagnetic semiconductor/ferromagnetic semiconductor ternary heterostructure. The ferromagnetic semiconductor material is a ferromagnetic film of semiconductor titanium dioxide doped with vanadium in amount of 3-5 at % with respect to titanium, having a crystalline structure of anatase and grown on a dielectric substrate. The film of doped titanium dioxide is further implanted at room temperature with cobalt ions with a dose of (1.3-1.6)·10¹⁷ cm^-2 and, at temperatures not lower than 300 °K in the absence of an external magnetic field, retains remnant magnetisation of not less than 70% of the saturation magnetisation value.

EFFECT: producing ferromagnetic semiconductor material, having high magnetisation at room temperature and higher temperatures in the absence of an external magnetic field.

3 cl, 3 dwg, 3 ex