MAGNETORESISTIVE SPIN LED Russian patent published in 2021 - IPC H01L33/02 H01L33/30 

FIELD: semiconductor devices.

SUBSTANCE: invention relates to semiconductor devices for a magnetoresistive spin LED, in which the radiation intensity and the degree of circular polarization can be independently controlled using a magnetic field. A magnetoresistive spin LED has a spin LED and a magnetoresistive element arranged in series one above the other. In this case, the spin LED includes a semiconductor part, which is a light-emitting heterostructure, including a semiconductor single-crystal gallium arsenide substrate with either n-type or p-type conductivity, and a semiconductor buffer layer made of gallium arsenide with either n-type conductivity, or p-type, an emitting layer, which is a quantum well, made of a solid solution of the In_xGa_1-xAs composition with the content of In x = 0.05-0.22, and a semiconductor gallium arsenide spacer layer. There is a dielectric layer of aluminum oxide and a ferromagnetic Schottky contact made of a ferromagnetic CoPt alloy or a ferromagnetic CoPd alloy above the semiconductor part of the spin LED. The spin LED is separated from the magnetoresistive element by an aluminum oxide dielectric layer and a non-magnetic metal layer over the ferromagnetic Schottky contact. Above the non-magnetic metal layer, a magnetoresistive element is made, including a chromium buffer layer, a lower ferromagnetic layer, a non-magnetic copper layer, an upper ferromagnetic layer, and a protective layer of manganese gallide Mn_xGa₅ (x = 2-3), a base electrode for the substrate. Moreover, the dielectric layer, the Schottky ferromagnetic contact and the non-magnetic metal layer are made one above the other in such a way that they form a round contact with a diameter of 0.05-1 mm, and an area isolated from the flow of electric current is formed around the contact.

EFFECT: invention provides increased information capacity of semiconductor elements, which are memory cells in the circuits for storing, transmitting and processing information.

11 cl, 3 ex, 7 dwg