FERROMAGNETIC SEMICONDUCTOR HETEROSTRUCTURE Russian patent published in 2011 - IPC C30B29/10 H01L21/02 

FIELD: electricity.

SUBSTANCE: invention may be used to develop elements of spintronic devices, which combine a source and a receiver of polarised spins of charge carriers in a heterostructure: a ferromagnetic semiconductor - a non-magnet semiconductor. In devices of spin electronics a spin is used as an active element to store, process and transfer information in development of magnetoelectronic elements and instruments. The ferromagnet semiconductor heterostructure for spintronics includes a film of alloyed semiconductor titanium dioxide ferromagnetic at temperatures of at least 300 K on a semiconductor substrate, at the same time the titanium dioxide film is alloyed with vanadium in amount from 3 to 18 at.% relative to titanium, has crystalline structure of rutile and specific electric resistance in the range from 0.01 to 0.1 Ohm·cm, or in the range from 2 to 20 kOhm·cm, and is epitaxially grown on a single-crystal substrate of titanium dioxide in the same crystalline modification so that the heterostructure complies with the formula TiO₂:V/TiO₂. The heterostructure is designed for operation at room and higher temperatures and comprises cluster-free ferromagnetic semiconductor with high magnetisation, a paramagnetic semiconductor and an ideal interface between homogeneous materials.

EFFECT: unique combination of related ferromagnetic and semiconductor layers of heterostructure based on titanium oxide, providing for high quality of interface, makes such heterostructures a promising product for wide practical use in instruments of spin electronics.

2 dwg, 4 ex