METHOD OF MAKING FERROMAGNETIC SEMICONDUCTOR MATERIAL Russian patent published in 2009 - IPC H01L21/425 

FIELD: physics.

SUBSTANCE: invention relates to the technology of making ferromagnetic semiconductor materials. The method of making ferromagnetic semiconductor material involves addition into a substrate based on titanium dioxide, ions of cobalt impurities using ion-beam implantation. Cobalt ions are implanted into a single-crystal substrate of rutile TiO₂, directed along the crystallographic line <001> with respect to the ion beam and heated to temperature not lower than 875 K. Values of energy of cobalt ions in the beam, ion current intensity and exposure are assigned. These values provide for uniform distribution of impurities in the entire volume of the substrate and the required values of magnetic characteristics of the obtained material.

EFFECT: method provides for obtaining ferromagnetic semiconductor material, uniformly doped in the volume, and combines semiconductor properties with high values of magnetic characteristics.

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