FIELD: nanotechnology.
SUBSTANCE: invention relates to the field of technology of production of nanoparticles and can be used in obtaining the new materials for micro- and optoelectronics, LED lamps, power electronics and other fields of semiconductor technology. The technical result is achieved by the fact that in the method of production of semiconductor nanoparticles the semiconductor sample (crystal of lead chalcogenide - PbTe, PbS, PbSe) is placed into the inert liquid phase (e.g., glycerol), the laser radiation is focused from the side of the solution at the interface of the sample and liquid with the spot diameter from 50 microns to 100 microns, varying the power in the range from 4 W to 10 W without formation of an optical-induced breakdown.
EFFECT: reduction of production steps and the lack of special equipment.
2 dwg
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