METHOD FOR DEPOSITION OF LEAD CHALCOGENIDES SEMICONDUCTOR NANOPARTICLES FROM COLLOIDAL SOLUTIONS Russian patent published in 2016 - IPC H01L21/203 B82B3/00 

Abstract RU 2587537 C1

FIELD: electricity.

SUBSTANCE: invention relates to technology of lead chalcogenides semiconductor nano particles deposition on transparent dielectric surface and can be used in production of new devices on basis of nano systems for micro- and optoelectronics, solar batteries, LED lamps and other areas of semiconductor engineering. Technical result achieved by this method, is that deposition of lead chalcogenides semiconductor nano particles of colloidal solution is performed from solution drops, which is applied onto surface heated from 20 to 200 °C, with help of capillary from 0.1 to 1 mcm with volume up to 200 mcl.

EFFECT: production of nano-structured thin coatings semiconductors structures from solutions on surface of solid bodies with controlled morphology of deposited layer.

1 cl, 8 dwg

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RU 2 587 537 C1

Authors

Antipov Aleksandr Anatolevich

Kutrovskaya Stella Vladimirovna

Kucherik Aleksej Olegovich

Dates

2016-06-20Published

2015-04-10Filed