METHOD OF CHEMICAL DEPOSITION OF SEMICONDUCTOR FILMS FROM CHALCOGENIDES OF METALS Russian patent published in 1994 - IPC

Abstract SU 1766210 A1

FIELD: semiconductor production. SUBSTANCE: semiconductor plates are put into electrolyte containing 2·103 mol/l Pb(NO3)2, tiocarbamide 5·10-3 mol/l; or selenocarbamide 5·10-3 mol/l. Electrolyte with substrate is heated with the aid of heater to temperature at which deposition starts. Simultaneously with heating semiconductor plates are exposed to pulse laser radiation on length of wave from region of radiation absorption with molecules of chalogen-containing substance. Length of pulses is 10-5-10-7 with frequency 0.1-30 kHz and power density 104-107V/cm2. EFFECT: improved efficiency of deposition. 2 tbl

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SU 1 766 210 A1

Authors

Komov A.N.

Dorofeeva L.L.

Lenivkina I.V.

Lenivkin V.V.

Krichevskaja T.P.

Stol'Nits M.M.

Dates

1994-04-15Published

1990-12-25Filed