FIELD: semiconductor production. SUBSTANCE: semiconductor plates are put into electrolyte containing 2·103 mol/l Pb(NO3)2, tiocarbamide 5·10-3 mol/l; or selenocarbamide 5·10-3 mol/l. Electrolyte with substrate is heated with the aid of heater to temperature at which deposition starts. Simultaneously with heating semiconductor plates are exposed to pulse laser radiation on length of wave from region of radiation absorption with molecules of chalogen-containing substance. Length of pulses is 10-5-10-7 with frequency 0.1-30 kHz and power density 104-107V/cm2. EFFECT: improved efficiency of deposition. 2 tbl
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Authors
Dates
1994-04-15—Published
1990-12-25—Filed