FIELD: nanotechnology.
SUBSTANCE: semiconductor film is influenced with continuous laser irradiation with quantum energy exceeding the band gap in the power range from 5 to 10 W, with a diameter of the laser beam on the film surface from 30 to 100 mcm, so that the intensity of exposure does not exceed 106 W/cm2, when scanning the surface of the film at a rate of 40 to 160 mcm/s.
EFFECT: invention simplifies the technical process, does not require any special equipment and enables to cover the devices with a characteristic period of location of the elements on the surface of 100 nm to 1 mcm.
8 dwg
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