COMPOSITE TRANSISTOR Russian patent published in 2014 - IPC H03F3/45 

FIELD: electricity.

SUBSTANCE: composite transistor contains an input transistor (1) which base is the base (2) and emitter is the emitter (3) of the composite transistor, an output transistor (4) which collector is the collector (5) of the composite transistor and its emitter is connected to the collector of the input transistor (1), at that in the circuit there is an additional transistor (6) which static mode against the emitter current is set by an additional reference power supply source (7) coupled between the first (8) power supply bus and the emitter of the additional transistor (6), at that the base of the additional transistor (6) is connected to the base of the input transistor (1), its collector is connected to the emitter of the input transistor (1) and the emitter is connected to the base of the output transistor (4).

EFFECT: increasing upper limit frequency of different amplifiers due to reduction of the input and output capacity for the composite transistor used in them.

2 cl, 10 dwg