TERAHERTZ ANTENNA Russian patent published in 2014 - IPC G01N21/3581 

Abstract RU 2528243 C2

FIELD: radio engineering, communication.

SUBSTANCE: invention relates to a terahertz antenna, particularly a tunable terahertz antenna based on a semiconductor material. The antenna has a semiconductor film (3) on a piezoelectric material (10), having a surface capable of exhibiting surface plasmons in the terahertz frequency range. The surface of the semiconductor film (3) is structured by an antenna structure (4), capable of supporting local surface plasmon resonances in the terahertz frequency range.

EFFECT: invention increases sensitivity and selectivity.

15 cl, 6 dwg

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RU 2 528 243 C2

Authors

Gomes Rivas Khajme

Dzhannini Vinchentso

Berr'E Odri Ann-Mari

Majer Stefan Aleksander

Matters-Kammerer Marion

Tripodi Lorentso

Dates

2014-09-10Published

2010-06-04Filed