FIELD: optonanoelectronics.
SUBSTANCE: invention relates to optonanoelectronics, particularly to devices based on quantum dots (QD), and can be used to create a detector of electromagnetic waves in the submillimetre (terahertz) range. Substance of the invention consists in the fact that the detector of the submillimetre-terahertz range contains a base element with the possibility of placing it in an external magnetic field, including a system of quantum dots in a matrix, end electrodes, wherein the matrix is a transparent dielectric matrix based on borosilicate glass, containing semiconductor quantum dots based on InSb with "A++e" impurity complexes.
EFFECT: providing the possibility of detecting electromagnetic radiation in the submillimetre (terahertz) range by changing the electrical capacitance of the system.
1 cl, 4 dwg
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