PRODUCTION METHOD OF METAL TRITIUM TARGET Russian patent published in 2014 - IPC H05H6/00 

FIELD: metallurgy.

SUBSTANCE: method involves sputtering of hydride-forming metal layer onto the substrate by magnetron method using a carrier gas, heating of metal on the substrate up to the temperature of 450-500°C, saturation of the hydride-forming metal layer by tritium from the gas phase and cooling of the obtained target. Argon containing oxygen in the amount of 0.05-0.1 vol. %. is used as the carrier gas, and the target is cooled in the saturation chamber in tritium environment.

EFFECT: simplified process of target saturation due to the elimination of the operation to monitor the saturation degree of the hydride-forming metal layer, necessity to stop the saturation process and removal of tritium from the saturation chamber under high temperatures, improved safety of working conditions for the personnel.