METHOD TO MEASURE THERMAL JUNCTION-TO-CASE RESISTANCE OF SEMICONDUCTOR INSTRUMENT AND DEVICE FOR ITS REALISATION Russian patent published in 2014 - IPC G01R31/00 

FIELD: instrumentation.

SUBSTANCE: method is performed by means of exposure of a controlled semiconductor instrument to heated liquid by means of a jet. At the same time they determine n values of the output voltage of the controlled semiconductor instrument via equal time intervals. The produced data is stored in the form of an array of voltages. Using the produced data, they calculate the temperature ratio of voltage of the controlled semiconductor instrument. The array of voltages is converted into an array of temperatures by division of the members of the array of voltages into the temperature ratio of voltage. Detection of thermal junction-to-case resistance of the controlled semiconductor instrument is carried out n times using data of the array of temperatures, heat capacity, value of time intervals with subsequent detection of the average value of thermal resistance. The technical result in the device for measurement of thermal junction-to-case resistance of the semiconductor instrument, comprising a contact jaw with terminals for connection of the controlled semiconductor instrument, a temperature sensor, a source of power supply, a source of current, the outlet of which is connected to the contact jaw with terminals, is achieved by the fact that it includes serially connected a microcontroller and a computer, a nozzle with a connection circuit, an optic emitter and an optic receiver connected with it, the outlet of which is connected to the first inlet of the microcontroller, the second outlet of which is connected to the nozzle with the connection circuit, the second inlet of the microcontroller is connected to the outlet of the current source, the third inlet of the microcontroller is connected to the temperature sensor, and the outlet of the source of power supply is connected with the optic emitter.

EFFECT: higher accuracy and efficiency of measurement of thermal junction-to-case resistance of a semiconductor instrument.

2 cl, 6 dwg