FIELD: measuring equipment engineering.
SUBSTANCE: method includes heating semiconductor crystal by letting constant current I0 having given amplitude through it, during heating, measuring value of its heat-sensitive parameter, as which straight fall of voltage on crystal Uf is used, and concurrently temperature Tb of device body is measured in selected point. These values are recorded, by receiving them dependent on time t. Heating of semiconductor crystal is stopped after reaching temperature Tc having given value and in mode of natural cooling when feeding to crystal short measuring impulses of current having amplitude I0 and off-duty ratio not affecting heat balance of device, values of temperature-sensitive parameter and body base temperature are recorded, receiving dependencies Uf(t) and Tb(t) on cooling interval. Length of cooling interval is selected on basis of unconditional realization of t>>3τ, where τ - maximum heat constant of device construction, moment of dynamic balance t1 is determined at heating interval and on basis of received dependencies heat resistance of body transfer is calculated in current point t1.
EFFECT: shorter measurement time, lower device resources cost, higher percent of accepted products during measurement.
2 cl, 3 tbl, 2 dwg
