FIELD: physics.
SUBSTANCE: line of laser diodes consists of parallel-connected laser diodes based on semiconductor A3B5 laser heterostructures, multilayer oxides and multilayer contact metal coating on the top and bottom planes of the line, wherein external conducting layers of the metal coating are made from germanium.
EFFECT: reduced mechanical stress arising in the line of laser diodes during manufacture.
2 cl, 5 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF CREATING INTERCONNECTIONS IN SEMICONDUCTOR LASERS | 2012 |
|
RU2530203C2 |
| POWERFUL SEMICONDUCTOR LASER WITH NONLINEAR MICROCHANNEL COOLING SYSTEM | 2007 |
|
RU2399130C2 |
| THIN-FILM SEMICONDUCTOR INJECTION LASER BASED ON MULTIPLE PASS SEMICONDUCTOR HETEROSTRUCTURE (VERSIONS) | 2006 |
|
RU2351047C2 |
| STRUCTURE FOR GENERATING SUB-TERAHERTZ AND TERAHERTZ RANGE ELECTROMAGNETIC RADIATION | 2012 |
|
RU2503091C1 |
| SEMICONDUCTOR LASER | 1989 |
|
RU2007804C1 |
| HETEROJUNCTION STRUCTURE | 2012 |
|
RU2497222C1 |
| DATA STORAGE AND PROCESSING DEVICE AND ITS MANUFACTURING PROCESS | 1999 |
|
RU2208267C2 |
| SEMICONDUCTOR EMITTING DIODE | 1999 |
|
RU2179353C2 |
| METHOD OF MAKING THIN-FILM DIODE LASER BASED ON THIN MULTIPASS EMITTING p-n HETEROSTRUCTURE | 2008 |
|
RU2381604C1 |
| INJECTION LASER | 2006 |
|
RU2308795C1 |
