SEMICONDUCTOR DEVICE MANUFACTURING METHOD Russian patent published in 2020 - IPC H01L21/58 H01L23/00 

FIELD: electronic equipment.

SUBSTANCE: invention relates to electronic engineering, and more specifically to methods of making semiconductor devices and microchips intended for assembly into a housing using eutectic soldering and can be used for a wide range of electronic products. Method of making a semiconductor device comprises making working structures on a silicon substrate, gold coating of the reverse side of the substrate, opposite to the side with working structures, heat treatment of gold coating, separation of silicon substrate into crystals with working structures, eutectic soldering of chips in housing with mounting seat for silver-coated crystal, according to the invention, after heat treatment of the gold coating, the back side of the silicon substrate is treated with sulfur hexafluoride plasma in modes of 4-8 minutes and power input of 0.7-1.3 kW.

EFFECT: technical result is expansion of field of use when coating seat with silver, high labor productivity during assembly and high quality of soldering.

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