MANUFACTURING METHOD FOR HIGH-FREQUENCY LIMITED-CURRENT-INJECTION GUNN DEVICE Russian patent published in 1996 - IPC

FIELD: electronic engineering; manufacture of semiconductor devices. SUBSTANCE: rectangular matrices of windows are formed in shielding masking layer; center line of rectangular window is parallel to longer side of rectangle and coincides with one of crystallographic directions (011) of substrate. Surface of n-layer with masking layer is coated with first layer of eutectic composition, 600-1200 thick; matrix of microscopic regions of AuGe composition is formed by lift-off lithography method. Using regions obtained as masking coats, mesastructure cavities are formed in n-layer of semiconductor. Second layer of eutectic composition of second thickness equal to that of first layer is applied, then protector material and cathode metal layers are deposited on after the other. Layers formed are subjected to heat treatment in shielding environment for simultaneous shaping of regions injecting and limiting injection of current into device. Protector material is selected from Ti, V, Cr, Zr, Nb, Mo range, and/or their nitrides, borides. Relation between longer and shorter sides of rectangular window in masking layer is chosen in the range of (3:1.8):1. Material limiting current injection in device may by oxide with dielectric constant close to or greater than that of semiconductor material. EFFECT: improved efficiency of device. 5 cl, 16 dwg