FIELD: physics, semiconductors.
SUBSTANCE: invention is related to the field of semiconducting microelectronics and is intended for connection of semiconducting crystal to body by means of contact-reactive soldering with production of eutectic alloy Au-Si in manufacture of transistors and integral microchips. Substance of invention: in method of silicon crystals mounting in semiconducting instruments onto gold-plated surface of body with layer applied onto reverse side of crystal, layer applied onto reverse side of crystal is thin layer of amorphous silicon with thickness of 15-60 nm.
EFFECT: increase of thermal properties of high-capacity SHF transistors.
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