FIELD: chemistry.
SUBSTANCE: method of production of deeply profiled silicon structures includes application of protective film on flat plate from monocrystalline silicon with orientation of surface in plane (100), application of protective layer of photoconductive cell on it from two sides, carrying out uni-, bi-lateral photolithography, opening windows in protective film, re-application of protective film, carrying out uni-, bi-lateral photolithography, opening windows with smaller size to the surface of plate, carrying out anisotropic etching in formed window, etching of protective film and carrying out anisotropic etching. Alternative methods of manufacturing deeply profiled structures are presented.
EFFECT: reduction of labour consumption of manufacturing and increased quality of structures.
5 dwg
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