METHOD FOR FORMING MONOCRYSTALLINE ELEMENT OF MICROMECHANICAL DEVICE Russian patent published in 2017 - IPC H01L21/308 

Abstract RU 2628732 C1

FIELD: tool engineering.

SUBSTANCE: in the method for manufacturing a monocrystalline element of a micromechanical device, a flat plate of monocrystalline silicon is oxidized with a surface orientation in the plane (100), a protective photoresist layer is applied to it from both sides, windows are preopened in the photoresist layer by two-way photolithography, the oxide is etched through the opened windows and the plate is anisotropically etched to an intermediate depth h, the oxide is opened to form a monocrystalline element, the silicon is anisotropically etched until the required thickness of the monocrystalline element is obtained. According to the method, after the oxide opening, the thinning of the plate is carried out by applying a protective coating in the area of the monocrystalline element formation, anisotropic etching is carried out until the required thickness of the monocrystalline element is obtained and the protective coating is removed.

EFFECT: increased manufacturability of producing monocrystalline elements due to the possibility of forming elements with different cross-section.

8 dwg

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RU 2 628 732 C1

Authors

Pautkin Valerij Evgenevich

Abdullin Farkhad Anvyarovich

Pospelov Aleksej Vladimirovich

Dates

2017-08-21Published

2016-05-20Filed