MANUFACTURING METHOD OF DEEP-SHAPED SILICON STRUCTURES Russian patent published in 2011 - IPC H01L21/308 

FIELD: instrument making.

SUBSTANCE: manufacturing method of deep-shaped silicon structures involves creation of protective layer on silicon plate; formation in it by means of in-series photolithography and etching operations the structure of the specified shape till silicon appears in the area of its maximum depth, and then silicon and the rest protective layer is etched till the specified shape is obtained. According to the invention, after creation of protective layer and prior to the first photolithography operation, along the protective layer surface there created is contrast layer from the material differing from protective layer material, and after each photolithography operation prior to etching of protective layer there etched is contrast layer.

EFFECT: improving manufacturing accuracy of deep-shaped silicon structures.

10 dwg