FIELD: chemistry.
SUBSTANCE: invention relates to a product, namely to a power cable, which includes a semiconductor layer, containing a semiconductor polyolefin composition. The composition contains graphene nanoplates, where the average thickness of the graphene nanoplates is in the range from 1 nm to 50 nm, and their side diameter constitutes 200 mcm or less, and olefin polymer resin of the base. The composition for the power cable can additionally contain solid electroconductive filler, different from the graphene nanoplates. The application of the semiconductor polyolefin composition in the semiconductor layer of the power cable is also described. Improvement of electrical exploitation characteristics in the process of annealing at temperatures lower than the temperature of the polymer melting and the temperature dependence of specific volume resistance in comparison to the one that has place for the respective semiconductor polyolefin compositions based on carbon soot.
EFFECT: roughness of the surface of the semiconductor polyolefin composition for extruded samples constitutes 100 mcm and less.
14 cl 7 dwg, 2 tbl
| Title | Year | Author | Number |
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| METHOD OF PRODUCING GRAPHENE MATERIAL | 2018 |
|
RU2693755C1 |
| CABLE INSULATION COMPOSITION | 2018 |
|
RU2741575C1 |
