SHF-AMPLIFIER BASED ON HIGH-TEMPERATURE SQUID WITH FOUR JOSEPHSON CONTACTS Russian patent published in 2015 - IPC H03F19/00 H01L39/22 

FIELD: electricity.

SUBSTANCE: method includes identical and paralleled first and second Josephson contacts formed in a layer of high-temperature superconductor (HTSC) and placed along bicrystal boundary of the layer and an input inductive element coupled between adjoining current leads of Josephson contacts. There are auxiliary third and fourth Josephson contacts, at that critical current values of the first and second Josephson contacts coincide, the same value of the third Josephson contact is less and the same value of the fourth Josephson contact is more. HTSC layer is shaped as a path that crosses the bicrystal boundary twice and forms a closed circuit with the above inductive element placed at one side of the bicrystal boundary. The third and fourth Josephson contacts are placed at cross points of the above path with bicrystal boundary, and width of the path at the site of the fourth contact placement exceeds the width for placement of the third one.

EFFECT: increasing amplification linearity in gigahertz band of frequencies without use of feedback circuits SHF-amplifier based on high-temperature SQUID.

5 cl, 5 dwg