METHOD FOR MANUFACTURING OF HIGH-TEMPERATURE SUPERCONDUCTING JOSEPHSON JUNCTION Russian patent published in 1998 - IPC

FIELD: cryogenic microelectronics, in particular, design of electronic equipment which uses superconductors and Josephson effect. SUBSTANCE: method involves development of bi-crystal from double seed which has two single-crystal units, which [001] axes are parallel and [100] and [010] axes are located in symmetry about each other at angle of 36.86 or 28.07 or 22.62 degrees. Then single- crystal units are pressed to each other against polished surfaces and double seed which is located in holder for rotation is deposited in chamber which contains noble gas or vacuum under melting temperature of crystal material running simultaneous rotation and reciprocal movement of double seed and melt under speed of 5-6 mm per hour so that crystal grows on double seed. Crystal is cooled and is subjected to cutting bi-crystal substrate which is oriented along plane [001]. Bi-crystal is developed from strontium titanate. Bi-crystal substrate is cut from grown bi-crystal so that its surface planes are parallel to axis of bi-crystal development or are perpendicular to that axis. Later processing method involves chemical-mechanic polishing, deposition of high-temperature superconducting film on substrate, deposition of contact plates and subsequent photolithography of high-temperature superconducting film and its etching. EFFECT: effective temperature is about liquid nitrogen boiling point and characteristics are about those of 4.2 K superconductors. 4 cl, 3 dwg