PROCESS OF MANUFACTURE OF HIGH-TEMPERATURE SUPERCONDUCTING JOSEPHSON JUNCTION Russian patent published in 1998 - IPC

Abstract RU 2107358 C1

FIELD: cryogenic microelectronics. SUBSTANCE: invention refers to manufacture of devices operating in superhigh frequency range with level of inherent noises approaching to quantum threshold which operation is based on phenomenon of high-temperature superconductance and Josephson effect with working temperature near boiling temperature of liquid nitrogen and characteristics compared favorably with characteristics of analogs operating under temperature of 4.2 K. Bicrystal is grown from melt of leucosapphire on to double seed that is manufactured from two monocrystal plates of triangular form cut from monocrystalline ingot of leucosapphire. After this section which plane is ground and chemically and mechanically polished is made on side surfaces of each plate and then plates are interjoined with planes of section in holder. Later double seed is placed into vacuum or inert gas atmosphere at melting temperature of leucosapphire, double seed is brought in touch with melt of leucosapphire and bicrystal is grown on to double seed. Bicrystal substrate is cut from it after cooling. Buffer layer on to which epitaxial high- temperature superconducting film is sprayed is deposited on to surface of substrate after chemical and mechanical polishing. EFFECT: improved efficiency of process. 2 dwg

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RU 2 107 358 C1

Authors

Alaudinov Bagomed Magomedovich

Kov'Ev Ehrnst Konstantinovich

Kuprijanov Mikhail Jur'Evich

Poljakov Sergej Nikolaevich

Dates

1998-03-20Published

1997-01-13Filed