FIELD: process engineering.
SUBSTANCE: invention relates to substrate with etching mask applied with the help of diamond-like carbon and to method of its production. Claimed process comprises the steps that follow. Substrate is made to apply photosensitive material thereon. Sais material is exposed and developed to get the pattern in photoresist lacquer. Cover film of diamond-like carbon is produced on substrate surface and pattern surface in said photoresist lacquer. Cover film with pattern in photoresist lacquer is separated to get the pattern of diamond-like carbon of substrate surface.
EFFECT: substrate with etching mask for high-precision application of pattern.
6 cl, 5 dwg
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