FIELD: instrumentation.
SUBSTANCE: in this method of manufacturing flexible microprinted board the wafer of single-crystal silicon with the thickness of 20-100 mcm, diameter of 200-300 mm, <100> orientation, is preliminary oxidised, which was preliminary oxidised to the thickness of 1-2 mcm, with subsequent removal of the oxide from one side, and after application of coatings and photolithography the etching of the silicon wafer is carried out with silicon dioxide and the subsequent separation of the polymer film with the electroconductive circuit and the metal-resistive coating.
EFFECT: obtaining high-density mounting with the width of electroconductive tracks less than 50 mcm, reduction of the process cycle.
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