NANOELECTROMECHANICAL RESONATOR AND METHOD FOR ITS MANUFACTURE Russian patent published in 2023 - IPC H03H3/07 H01L21/308 B81B3/00 

FIELD: electrical engineering.

SUBSTANCE: semiconductor devices, namely nanoelectromechanical systems (NEMS), used for the manufacture of highly sensitive sensors, the principle of operation of which is based on the transformation of external influences. Nanoelectromechanical resonator with a membrane, which is a suspended part of the membrane material, such as silicon nitride, from which the resonator base is formed, and methods for their manufacture, while the resulting membrane can be used to manufacture highly sensitive sensors. The formation of a resonator membrane and/or nanowire on the surface of a silicon wafer with a length-to-width ratio of more than 100 is the technical result of the invention, which is achieved by making process holes in the silicon wafer, made to ensure the intersection of the grooves formed in the silicon wafer during etching through process holes, while the base of the groove, adjacent to the rear side of the membrane, has the shape of a rectangle, into which the process hole is inscribed, with the sides of the rectangle parallel to the main crystallographic axes [100], and the cavity under the membrane is formed by merged grooves. Process holes are made extended and located parallel to the crystallographic axis [110] or at an angle to the main crystallographic axis [100] from 20 to 45 degrees, providing a higher rate of silicon etching in the directions of its crystallographic axes [100] and [110] compared to the rate etching in the [111] direction.

EFFECT: increase in the percentage of yield of suitable products that are easily embedded in integrated circuits.

21 cl, 26 dwg