MASK FOR NEAR-FIELD LITHOGRAPHY AND ITS MANUFACTURE Russian patent published in 2015 - IPC G03F1/00 G03F7/20 B82Y40/00 

Abstract RU 2544280 C2

FIELD: printing.

SUBSTANCE: invention relates to the field of lithography and relates to methods of manufacturing of cylindrical photomask provided with nano-pattern. The method comprises applying a layer of elastomeric material on the transparent cylinder with the subsequent formation on the elastomeric material of the pattern elements ranging in size from 1 nm to 100 mcm. Formation of the pattern elements is carried out by transferring the pattern elements with preliminary fabricated template, or using a process of direct formation of the pattern on the elastomeric material. Embodiments of the method comprise formation of the pattern with the elements in size from 1 nm to 100 microns on the elastomeric material, followed by lamination of the elastomeric material provided with nano-pattern on the surface of the cylinder.

EFFECT: providing the ability of manufacturing the nanoscale elements using the method of near-field lithography.

25 cl, 20 dwg

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RU 2 544 280 C2

Authors

Kobrin Boris

Dates

2015-03-20Published

2011-07-25Filed