PURIFICATION OF INDUSTRIAL SILICON Russian patent published in 2015 - IPC C01B33/37 C01B33/02 C30B11/00 C30B29/06 

Abstract RU 2565198 C1

FIELD: metallurgy.

SUBSTANCE: removal of impurities from industrial silicon, in particular, of iron comprises fusing the charge in the crucible, silicon teeming and melt crystallization for pushing off of impurities. Prior to teeming iron content in silicon is defined. Teeming and crystallization are performed in inclined crucibles preheated to 400-600°C. The inclination angle of said crucibles relative to horizon in the range of 0-90 degrees is defined by the formula Φ = 400·Fe, where Φ is said inclination angle, degrees, Fe is iron content in silicon before teeming, wt %. Invention allows the production of silicon with iron content lower than 0.20 wt %.

EFFECT: higher purification degree.

2 tbl

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RU 2 565 198 C1

Authors

Elkin Dmitrij Konstantinovich

Koshkin Sergej Valentinovich

Goloseev Sergej Ivanovich

Peganov Mikhail Vladislavovich

Dresvjanskij Dmitrij Viktorovich

Moljavko Anton Alekseevich

Elkin Konstantin Sergeevich

Dates

2015-10-20Published

2014-11-27Filed