VERY LOW RESISTANCE FILMS AND METHODS FOR MODIFYING OR CREATING THEM Russian patent published in 2015 - IPC H01L39/24

Abstract RU 2567021 C2

FIELD: chemistry.

SUBSTANCE: invention refers to very low resistance films (VLR films). A method for improving working characteristics of the very low resistance film containing a very low resistance material having a crystalline structure comprises: laminating a modifying material on a VLR material interface, which is substantially parallel with a c-plane of the crystalline structure of the VLR material of the VLR film, to create the modified VLR film; the modified VLR film possesses the improved working characteristics as compared to the VLR free from the modifying material.

EFFECT: invention provides producing the VLR films with the improved working characteristics.

38 cl, 46 dwg

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RU 2 567 021 C2

Authors

Gilbert Duglas Dzh.

Kejl Timoti S.

Dates

2015-10-27—Published

2010-10-02—Filed