FIELD: chemistry.
SUBSTANCE: method of producing a nitride monocrystal by epitaxial growth on a base (100), having a growth plane (105), comprises steps of: forming a sacrificial layer (101) on the base (100), forming columns (102) on said sacrificial layer, growing a nitride crystal (103) layer on the columns at such growth conditions that said nitride crystal layer does not pass downwards to the base in depressions (107) formed between the columns, removing the nitride crystal layer from the base. Said columns (102) are made from material which is compatible with epitaxial growth of GaN, and the ratio D/d of the height D of one column to the distance d between two neighbouring columns is greater than or equal to 1.5.
EFFECT: invention enables to implement a method of making stand-alone GaN substrates with low density of dislocations and uniform distribution thereof.
21 cl, 37 dwg, 4 ex
