CONTROL OVER DISLOCATIONS AND STRAINS IN MASK-FREE PROCESSES WITH HELP OF SUBSTRATE PATTERNING AND METHODS FOR FABRICATION OF DEVICES Russian patent published in 2015 - IPC H01L21/02 

FIELD: process engineering.

SUBSTANCE: invention relates to structures and to fabrication of piles semiconductor active plies. The structure comprises patterned crystalline semiconductor substrate with elevated areas confined by grooves with depth equal to width, and epitaxial semiconductor deposited on the substrate elevated areas shaped to isolated spots. Note here that said substrate is made of the first crystalline semiconductor. Epitaxial semiconductor includes at least one second crystalline semiconductor that features mismatched crystal lattice or mismatched factor of linear thermal expansion relative to substrate. Note here that the rate of vertical growth of epitaxial grown material is notably higher than that of lateral growth.

EFFECT: semiconductor active ply piles with pattern-matched lattice parameters, mismatched crystal lattice parameters and thermal expansion factor, low density of helical dislocations, no cracking of plies and minimized flexure of substrate.

13 cl, 41 dwg