MONOCRYSTALLINE FILMS OF METALS Russian patent published in 2019 - IPC C23C14/14 C23C14/24 

FIELD: chemistry.

SUBSTANCE: invention relates to deposition of thin continuous monocrystalline metal film by physical deposition from gas phase. Film is two-stage deposited in the form of layers. At the first step, a seed layer is deposited on the substrate at a first temperature in range between 20 % and 90 % of the melting point of the deposited metal, and at the second step, a greater amount of metal is deposited on the seed layer at a deposition rate of 0.05–50 AE at a second temperature lower than the first temperature until a solid monocrystalline metal film with thickness of 10 to 2000 nanometers is formed. As a result of the disclosed method implementation, a thin solid monocrystalline metal film is obtained, which is a metal deposited on the surface of the substrate and having thickness of 10–2000 nm, less than 20 defects on an area of more than 15×15 mm and a root-mean-square roughness of the surface of less than 1 nm, measured by an atomic-force microscope on area of 90 mcm at 90 mcm.

EFFECT: enabling formation of solid and monocrystalline film.

19 cl, 5 dwg