METHOD OF OBTAINING LATERAL NANOSTRUCTURES Russian patent published in 2019 - IPC B82B3/00 

FIELD: nanotechnologies.

SUBSTANCE: method of obtaining lateral nanostructures, in which the modulation of the composition of the nanostructure or heterostructure in the lateral direction is carried out without the use of nanolithography technique due to the peculiarities of the layer-by-layer growth mode of Frank-van der Merwe, in which, with the growth of a separate monolayer, tangential motion of the boundaries of islands, starting from defects inherited from layer to layer, different, alternating designs of nanostructures, materials. Inherited from a monolayer to a monolayer, crystal structure defects or artificially created nuclei determine the frequency of individual nanostructures grown by this method. Method distinguishes three modes in the growth mode of Frank-van der Merwe: 1) the radial motion of the island boundary (similar to the Volmer-Weber growth mode on the surface); 2) parallel displacement of the boundary (similar to the layered mode); 3) a point growth of the boundary only due to the capture of the adsorbed particle by a bend of a step.

EFFECT: in the case of the implementation of the latter mode, it is possible to obtain lateral nanostructures that do not include the nucleus region associated with the inherited defect.

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