NANOSIZE STRUCTURE WITH QUASI-ONE-DIMENSIONAL CONDUCTING TIN FIBRES IN GaAs LATTICE Russian patent published in 2014 - IPC H01L29/775 B82B1/00 

FIELD: physics.

SUBSTANCE: invention relates to nanosize semiconductor structures comprising a system of quasi-one-dimensional conducting channels used to make nanoelectronic and nanophotonic devices. The technical result is increase in electron concentration in the active region of the nanostructure. The nanostructure obtained from molecular beam epitaxy contains a monocrystalline semi-insulating vicinal substrate of GaAs (100) with misorientation angle of 0.3°-0.4° in the <011> direction, a buffer undoped layer of GaAs, a tin delta-doped layer which covers the undoped GaAs layer and a silicon-doped contact layer of GaAs. During epitaxy, a system of atomically smooth terraces separated by steps with monoatomic thickness is formed on the surface of the buffer layer. During doping, tin atoms accumulate near the steps as a result of surface diffusion to form conducting nanofibres of tin atoms lying in one plane parallel to each other.

EFFECT: use of tin in GaAs instead of silicon increases electron concentration in the delta layer since tin has a higher solubility limit and does not exhibit amphoteric properties.

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