FIELD: physics.
SUBSTANCE: photosensitive cell array includes a wide-bandgap semiconductor substrate whose thickness is at least an order greater than the diffusion length of minority charge carriers, an antireflection dielectric coating on the front side of the substrate and photosensitive cells with a narrow-bandgap active layer on the rear side of the substrate. According to the invention, the photosensitive cell array comprises an additional layer between the substrate and the antireflection dielectric coating; the bandgap of the additional layer is not greater than the bandgap of the substrate and is greater than the bandgap of the narrow-bandgap active layer of the photosensitive cell, and the nonradiative recombination rate of minority charge carriers in the additional layer is at least an order greater than the radiative recombination rate.
EFFECT: high signal-to-noise ratio of the photosensitive cell array.
3 cl, 4 dwg
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Authors
Dates
2015-12-20—Published
2014-10-03—Filed