SEMICONDUCTOR ELECTROLUMINESCENT LIGHT SOURCE Russian patent published in 2024 - IPC H01L33/04 H01L33/50 

FIELD: lighting engineering.

SUBSTANCE: semiconductor electroluminescent light source comprises GaAs substrate (1) and an emitting p-n-heterostructure AlGaInAs, comprising photoluminescent structure (FS) AlGaInAs isotype with substrate (2), to which AlGaAs electroluminescent p-n-structure (ES) (3) adjoins. FS (2) and ES (3) contain respectively active regions (4, 9) with multiple quantum wells made from In_yGa_1-yAs-Al_xGa_1-xAs in FS (2) and from Al_xGa_1-xAs in ES (3). Limiting layers (5, 6 and 10, 11) of AlxGa_1-xAs adjoin active regions (4, 9) on both sides with Al concentration in ES and FS greater than in layers of active regions (4, 9) in FS (2) and in ES (3). Barrier Al_xGa_1-xAs layers (7, 8 and 12, 13) adjoin limiting layers (5, 6 and 10, 11) with concentration of Al in ES (3) and FS (2) exceeding concentration of Al in limiting layers ES (3) and FS (2). Concentrations of Al in layers of active region (9) of ES (3) are set to exceed concentration of Al in limiting layers (5, 6) of FS (2). Two front layers (11, 13) in ES are made with conductivity type opposite to that of substrate (1) and other layers of heterostructure, which are isotyped with substrate (1). Ratios of thicknesses between limiting and barrier layers in FS (2) and ES (3) are established.

EFFECT: semiconductor electroluminescent light source made according to invention, provides an increase in the external quantum yield of radiation with an internal quantum efficiency close to 100 % in the photoluminescent part of the structure.

3 cl, 2 dwg