FIELD: laser engineering.
SUBSTANCE: invention relates to semiconductor lasers excited by current, light, electron beam. Invention consists in that design of semiconductor laser based on heterostructure comprising a laser crystal, heat removal from side of epitaxial layers of heterostructure, current supply electrodes and flexible electric conductors, current supply electrodes are parallel to axis of resonator of laser crystal, and flexible electrical wires connect substrate of heterostructure directly with electrodes of same polarity.
EFFECT: technical result is increasing power of laser radiation in a continuous generation mode or maximum and average power in a pulse generation mode, reduction of series resistance, higher efficiency, as well as improving reliability, reduced dimensions, higher output of non-defective articles.
3 cl, 4 dwg
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