SEMICONDUCTOR LASER Russian patent published in 2000 - IPC

FIELD: quantum electronics, specifically, design of semiconductor lasers excited by current, light, electron beam. SUBSTANCE: in proposed design of laser heat sinks are linked to crystal on two sides. Heat sink on side of substrate locally borders directly on epitaxial layers of heterostructure. Heat sinks can bulge out with regard to output mirror of laser resonator along resonator axis in direction of emission output. Faces of heat sinks between bulging-out edges of heat sinks and output mirror of laser can be made inclined relative to axis of resonator or they can be manufactured in the form of flat, spherical or aspherical mirrors. Proposed semiconductor laser can find use in the capacity of high-power radiation source in technology, medicine, pumping systems of solid lasers, in communication and navigation systems, in pickups. EFFECT: increased radiation power under continuous mode or of average power under pulse generation mode, prolonged service life thanks to effective removal of heat from active region of laser and output mirror of laser resonator. 4 cl, 4 dwg