INJECTION SEMICONDUCTOR LASER Russian patent published in 1998 - IPC

FIELD: high-power injection semiconductor lasers intended for usage in various fields of science and technology such as medicine, automatics, robotics, space communication, spectrometry, geology and so on. SUBSTANCE: proposed injection semiconductor laser is manufactured on basis of heterostructure having emitter layers and active region positioned between them. There is set of mesastrips placed in parallel with bases located in emitter layer nearest to them, insulating layer deposited in interstrip regions and continuous metal layer deposited above heterostructure and intended to feed current to laser. Insulating layer mentioned above is manufactured from polycrystalline silicon with specific resistance not less than ρ = 2•10^-3 Om•cm² and thickness of 0.1-0.5 mkm. EFFECT: expanded application field and increased operational characteristics of laser. 3 dwg