FIELD: metallurgy.
SUBSTANCE: method for obtaining high-purity indium involves indium vacuum heat treatment. With that, vacuum heat treatment is performed in two stages. At the first stage, it is performed at the temperature of 1000-1350°C; three condensed fractions are obtained, one of which is concentrated with semi-volatile impurities, the second one includes condensed sublimates concentrated with highly-volatile impurities, and the third one is cleaned from semi-volatile and highly-volatile impurities. The third fraction is directed to the second stage of vacuum heat treatment that is performed at the temperature of 1100-1200°C and at which metallic indium is cleaned from impurities with average volatility degree.
EFFECT: obtaining a product containing indium of not less than 99,9999 wt.
1 dwg, 1 ex
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