FIELD: computer engineering.
SUBSTANCE: invention relates to computer engineering. Spin state storage element comprises magnetic device with variable resistivity configured to receive magnetic control signal to control resistance of said magnetic device with variable resistivity; and magnetic logic switching device connected with magnetic device with variable resistivity, wherein magnetic logic switching device is configured to receive magnetic logic input signal and perform logical operation based on magnetic logic input signal, as well as possibility of generating output signal based on magnetic resistance of above magnetic device with variable resistivity.
EFFECT: technical result consists in creation of spin state storage element.
25 cl, 16 dwg, 5 tbl
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