METHOD OF PRODUCING HIGH-PURITY SILICON GRANULES Russian patent published in 2010 - IPC B29B9/10 C01B33/02 

FIELD: process engineering.

SUBSTANCE: proposed method comprises loading initial silicon into crucible, heating it in inert atmosphere to above melting point, forming silicon melt drops by making it flow through calibration orifice made in crucible bottom and cooling melt drops down to form granules. Note here that initial silicon is loaded in crucible of especially-pure quartz grit layer with thickness not less that 2 cm. Then initial silicon is heated to at least 1600°C for at least 40 min. Then melt drops are cooled down in deionised water, water weight exceeding that of initial silicon at least 5 times.

EFFECT: silicon granules with low content of impurities and without oxide layer of granule surface, higher efficiency.

1 dwg, 1 tbl, 1 ex