METHOD OF PRODUCING HIGH-PURITY SILICON PELLETS Russian patent published in 2013 - IPC B29B9/10 C01B33/37 C01B33/02 

FIELD: process engineering.

SUBSTANCE: invention relates to nonferrous metallurgy, particularly, to production of high-purity silicon to be used for making solar cells. Proposed method comprises loading initial silicon in crucible onto layer of super-purity quartz middlings to be heated in inert atmosphere to temperature exceeding that of fusion, holding at said temperature, forming silicon melt drops by pouring it out via gage orifice in crucible bottom, and cooling said drops to hardening in ionised water and pellets forming. Note here that, prior to loading into said crucible, initial silicon is mixed with calcium carbonate and silicon dioxide taken in amounts not smaller than 0.05 mol of each said element per 1 mol of silicon while heating is performed at the rate not exceeding 15°C/min.

EFFECT: high-purity silicon pellets from commercially available technical silicon.

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