FIELD: physics.
SUBSTANCE: invention relates to device for detection of magnetic field. Semiconductor device includes quantum waveguide in form of homogeneous conducting element made from conductor or heavily doped semiconductor with areas of source and drain and resonance region located between them, including one quantum resonator or system of two in-series installed quantum resonators formed by quantum waveguide tapers, quantum resonators are made with provision of collisionless electron motion mode from source to drain, as well as voltage source connected to areas of source and drain of electric contacts, and measuring device in voltage source circuit, wherein as characteristics of quantum resonators values of their Eres electron resonance energy levels are selected; as source and drain characteristics values of Fermi energy level EFs and EFd are selected, respectively; wherein length and diameter of single resonator is selected to meet Eres>EFs+kBT ratios or Eres<EFd-kBT ratio, and in system of two resonators their lengths and first and second resonators diameters are selected to match their levels of resonance power (Eres1, Eres2) when meeting EFd<Eres1=Eres2<EFs ratio, or from condition of difference in resonance power levels (Eres1, Eres2) with simultaneous meeting of conditions: Eres1-Eres2>max[ΔEres1, ΔEres2], where ΔEres1, ΔEres2 is width of first and second resonance power levels, respectively, where kB is Boltzmann constant, T is temperature.
EFFECT: high sensitivity of measurements, as well as device reduced thermo-sensitivity.
7 cl, 10 dwg
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Authors
Dates
2016-08-10—Published
2014-05-14—Filed