RESONANCE-TUNED SEMICONDUCTOR DEVICE BUILT AROUND QUANTUM BEATS Russian patent published in 2006 - IPC H01L29/15

Abstract RU 2269182 C2

FIELD: semiconductor and electronic devices with quantum potential wells; microelectronics, nanotechnology, and optoelectronics.

SUBSTANCE: oxidized thin-film nanocrystalline silicon that has impurity level in forbidden gap with energy of 0.14 eV from bottom of silicon conductivity gap enables generation of high-frequency oscillations of electrical or optical signals at frequency higher than 34 GHz.

EFFECT: enhanced speed, facilitated manufacture.

1 cl, 2 dwg

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RU 2 269 182 C2

Authors

Milovzorov Dmitrij Evgen'Evich

Dates

2006-01-27—Published

2003-02-27—Filed