STABILIZED TRANSISTOR UHF GENERATOR Russian patent published in 2022 - IPC H03B5/08 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the field of electric oscillation generation, in particular to transistor generators, mostly of a millimeter wavelength range with the stabilization of output frequencies (up to 100 GHz) by a dielectric resonator (DR); it can be used in receiving and transmitting UHF devices, radar sensors, medical equipment for EHF therapy. The device is characterized by higher thermal stability, lower level of phase noises, and stabilization at higher output frequencies compared to the known ones. The generator contains two electric substrates installed into a waveguide in parallel to its longitudinal axis and perpendicular to a wide wall. On one of substrates, there is a transistor, a source, a gate, and a drain of which are respectively connected to the first, the second, and the third conductive surfaces formed on this substrate. The first conductive surface is connected to the wide wall of the waveguide and connected to the second wide wall of the waveguide through a conductive surface located between the second and the third conductive surfaces. The second and the third conductive surfaces are connected on UHF by means of LC elements locking on frequency 2f₁ (f₁ – a generation frequency, 2f₁ – an input frequency) to the second wide wall of the waveguide, while slits between the mentioned conductive surfaces and part of a volume of the waveguide surrounding them form matching circuits and a resonant circuit, together with a short circuiter of the waveguide, on frequency 2f₁. At the same time, the first, the second, and the third conductive surfaces are connected to corresponding poles of the first and the second voltage sources through RLC filters. On the surface of the second dielectric substrate, facing a narrow wall of the waveguide, a dielectric resonator is installed with own resonance frequency f₁, the projection of the axis of which on the surface of the first dielectric substrate coincides with the location of the transistor. For the installation of resonant frequency f₁ on the narrow wall of the waveguide, facing the dielectric resonator, a movable element is placed coaxially with it. On the surface of the second dielectric substrate, facing the first dielectric substrate, in the area adjacent to the end of the dielectric resonator, elements are placed, providing electric rearrangement of the latter, and control circuits connected to them.

EFFECT: obtaining a transistor generator.

3 cl, 3 dwg