QUANTUM-BEAT BASED RESONANCE-TUNED SEMICONDUCTOR DEVICE Russian patent published in 2004 - IPC

FIELD: microelectronics, nanotechnology, and optoelectronics. SUBSTANCE: thin-film nanocrystal silicon doped with rhodium atoms until dopant-induced state is attained in forbidden gap of nanocrystal silicon with energies of 0.353 to 0.591 eV from bottom of silicon conductive region makes it possible to produce high-frequency oscillations of electrical or optical signals at frequency higher than 10¹³ Hz in electromagnetic field when voltage is applied. EFFECT: enhanced speed, facilitated manufacture. 1 cl, 4 dwg